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Dopants and Impurities in Semiconducting Nanowires
July 6, 2009 to July 8, 2009
Location : CECAM-HQ-EPFL, Lausanne, Switzerland
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There is 5 validated posters - Quantum confinement and electron-hole separation in [110] Si/Ge nanowires
Michele Amato, M. Palummo S. Ossicini - Study of GaAs,AlxGa1−xAs and their core-shell structures
Venkata Ravi Kishore Vepakomma, F. M. Peeters, and B. Partoens - Doping and Codoping in Silicon Nanowires and Nanocrystals: theoretical study of Formation energy, Electronic and Optical properties
Federico Iori, M. Palummo and S. Ossicini - Electronic and dynamical properties of freestanding silicon nanowires
Hartwin Peelaers, B. Partoens, and F.M. Peeters - A new modulation doping method for silicon nanostructures
Binghai Yan, Th. Frauenheim, W. Duan, and B. Gu
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